The migration of gold on large diameter silicon nanowires in oxygenous system

被引：2
|
作者：
Wan, Yuting [1 ]
Wang, Yewu [1 ]
Chen, Bo [1 ]
Fang, Yanjun [1 ]
Sha, Jian [1 ]
机构：
[1] Zhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 3 | 2009年 / 6卷 / 03期
关键词：
SURFACE MIGRATION; GROWTH; SI; PERFORMANCE;
D O I：
10.1002/pssc.200880711
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Silicon nanowires (SiNWs) of about 200-500 nm in diameter with branch morphology were fabricated by one step in oxygenous chemical vapour deposition (CVD) system. The catalyst Au particles on branches came from the migration of AU on the tip of trunk. We speculate that the migration of gold is due to the large diameter of gold particles. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：687 / 689
页数：3
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