Type-II InAsxSb1-x/InAs quantum dots for midinfrared applications: Effect of morphology and composition on electronic and optical properties

被引：12
|
作者：
Yeap, G. H. [1 ]
Rybchenko, S. I. [1 ]
Itskevich, I. E. [1 ]
Haywood, S. K. [1 ]
机构：
[1] Univ Hull, Dept Engn, Kingston Upon Hull HU6 7RX, N Humberside, England
来源：
PHYSICAL REVIEW B | 2009年 / 79卷 / 07期
关键词：
electronic structure; III-V semiconductors; indium compounds; infrared spectra; self-assembly; semiconductor quantum dots; FINITE-ELEMENT-ANALYSIS; SEMICONDUCTOR STRUCTURES; STRAIN DISTRIBUTION; BAND-EDGES; INAS/GAAS; NANOSTRUCTURES; ALLOYS; 8-BAND;
D O I：
10.1103/PhysRevB.79.075305
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
InSb-based self-assembled quantum dots are very promising for the midinfrared (3-5 mu m) optical range. We have analyzed the effect of geometry and composition on the electronic structure and optical spectra of InAsxSb1-x/InAs dots. The calculated transition energies agree well with the available experimental data. The results show that the geometry of the dot can be estimated from the optical spectra if the composition is known, and vice versa.
引用
收藏
页数：6
相关论文
共 50 条
  • [31] Photoluminescence and magneto-optical properties of multilayered type-II ZnTe/ZnSe quantum dots
    Kuskovsky, Igor L.
    Gong, Y.
    Neumark, G. F.
    Tamargo, M. C.
    SUPERLATTICES AND MICROSTRUCTURES, 2010, 47 (01) : 87 - 92
  • [32] Controlled optical properties of GaSb/InGaAs type-II quantum dots grown on InP substrate
    Zhang, S. H.
    Wang, L.
    Shi, Z. W.
    Tian, H. T.
    Gao, H. J.
    Wang, W. X.
    Chen, H.
    Li, H. T.
    Zhao, L. C.
    APPLIED PHYSICS LETTERS, 2012, 100 (25)
  • [33] Ultrafast optical properties of type-II CdZnS/ZnSe core-shell quantum dots
    Ran, Lingling
    Li, Haiyang
    Wu, Wenzhi
    Gao, Yachen
    Chai, Zhijun
    Xiao, Jin
    Li, Qinghua
    Kong, Degui
    OPTICS EXPRESS, 2018, 26 (14): : 18480 - 18491
  • [34] Growth and optical properties of GaSb/GaAs type-II quantum dots with and without wetting layer
    Kawazu, Takuya
    Noda, Takeshi
    Mano, Takaaki
    Sakuma, Yoshiki
    Sakaki, Hiroyuki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (04)
  • [35] Growth and optical properties of type-II InP/GaAs self-organized quantum dots
    Wang, BZ
    Chua, SJ
    APPLIED PHYSICS LETTERS, 2001, 78 (05) : 628 - 630
  • [36] Optical Aharonov-Bohm Effect in Type-II (ZnMn)Te/ZnSe Quantum Dots
    Sellers, Ian R.
    Govorov, Alexander O.
    McCombe, Bruce D.
    JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2011, 6 (01) : 4 - 19
  • [37] Optical Aharonov-Bohm effect on Wigner molecules in type-II semiconductor quantum dots
    Okuyama, Rin
    Eto, Mikio
    Hyuga, Hiroyuki
    PHYSICAL REVIEW B, 2011, 83 (19)
  • [38] Exciton storage in type-II quantum dots using the optical Aharonov-Bohm effect
    Climente, Juan I.
    Planelles, Josep
    APPLIED PHYSICS LETTERS, 2014, 104 (19)
  • [39] Interband optical absorption in strained InAs/InxGa1-x Sb type-II superlattices
    Phys Rev B, 20/PT2 (14 524):
  • [40] Effect of morphology on spectral properties of magneto-trion X+ in vertically coupled type II quantum dots
    Horta-Pineres, Sindi
    Elizabeth Escorcia-Salas, G.
    Mikhailov, I. D.
    Sierra-Ortega, J.
    PHYSICA B-CONDENSED MATTER, 2014, 453 : 151 - 153
12345