Appearance conditions for a semiconducting-substrate-induced gap in the density of states in epitaxial graphene

被引：14
|
作者：
Davydov, S. Yu. [1 ,2 ]
机构：
[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] St Petersburg Natl Res Univ Informat Technol Mech, St Petersburg 197101, Russia
来源：
TECHNICAL PHYSICS | 2014年 / 59卷 / 04期
基金：
俄罗斯基础研究基金会;
关键词：
METAL;
D O I：
10.1134/S1063784214040082
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The density of states in a semiconducting substrate is described with a model assuming a parabolic electronic spectrum. Analytical criteria for the appearance of a gap (gaps) in the density of states in epitaxial graphene are derived, and its (their) parameters (width and position relative to the forbidden gap of the substrate) are found. A way to experimentally verify analytical data is suggested.
引用
收藏
页码：624 / 627
页数：4
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