Octagonal Defects as the Source of Gap States in Graphene Semiconducting Structures

被引：0
|
作者：
Pelc, M. [1 ]
Jaskolski, W. [1 ]
Ayuela, A. [2 ]
Chico, L. [3 ]
机构：
[1] Nicolaus Copernicus Univ, Inst Phys, Fac Phys Astron & Informat, PL-87100 Torun, Poland
[2] Ctr Fis Mat CSIC UPV EHU, Donostia Int Phys Ctr, San Sebastian 20018, Spain
[3] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain
来源：
ACTA PHYSICA POLONICA A | 2013年 / 124卷 / 05期
关键词：
Compendex;
D O I：
10.12693/APhysPolA.124.777
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We study graphene nanoribbons and carbon nanotubes with divacancies, i.e., local defects composed of one octagon and a pair of pentagons. We show that the presence of divacancies leads to the appearance of gap states, which may act as acceptor or donor states. We explain the origin of those defect-localized states and prove that they are directly related to the zero-energy states of carbon ring forming the octagonal topological defect.
引用
收藏
页码：777 / 780
页数：4
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