Energy gaps induced by a semiconducting substrate in the epitaxial graphene density of states

被引：2
|
作者：
Davydov, S. Yu. [1 ]
Lebedev, A. A. [1 ]
Lebedev, S. P. [1 ]
机构：
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
SILICON CARBIDE AND RELATED MATERIALS 2012 | 2013年 / 740-742卷
关键词：
D O I：
10.4028/www.scientific.net/MSF.740-742.141
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The simple model for the one-layer graphene energy gaps induced by the substrate energy gap is proposed.
引用
收藏
页码：141 / 144
页数：4
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