Visible light emission from silicon implanted and annealed SiO2 layers

被引：14
|
作者：
Ghislotti, G
Nielsen, B
AsokaKumar, P
Lynn, KG
DiMauro, LF
Bottani, CE
Corni, F
Tonini, R
Ottaviani, GP
机构：
[1] BROOKHAVEN NATL LAB,DEPT PHYS,UPTON,NY 11973
[2] BROOKHAVEN NATL LAB,DEPT CHEM,UPTON,NY 11973
[3] POLITECN MILAN,DIPARTIMENTO INGN NUCL,I-20133 MILAN,ITALY
[4] UNIV MODENA,DIPARTIMENTO FIS,I-41100 MODENA,ITALY
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1997年 / 144卷 / 06期
关键词：
D O I：
10.1149/1.1837764
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Silicon implanted and annealed SiO2 layers are studied usin g photoluminescence (PL) and positron annihilation spectroscopy (PAS). Two PL emission bands are observed. a band centered at 560 nm is present in as-implanted samples and it is still observed after 1000 degrees C annealing. The emission time is fast. A second band centered at 780 nm is detected after 1000 degrees C annealing. The intensity of the 780 nm band further increased when hydrogen annealing was performed. The emission time is long (1 mu s to 0.2 ms). PAS results show that defects produced by implantation anneal at 600 degrees C. Based on the annealing behavior and on the emission times, the origin of the two bands is discussed.
引用
收藏
页码：2196 / 2199
页数：4
相关论文
共 50 条
  • [31] Silicon nanocrystal formation upon annealing of SiO2 layers implanted with Si ions
    Kachurin, GA
    Yanovskaya, SG
    Volodin, VA
    Kesler, VG
    Leier, AF
    Ruault, MO
    SEMICONDUCTORS, 2002, 36 (06) : 647 - 651
  • [32] Characterization of silicon-implanted SiO2 layers using positron annihilation spectroscopy
    Ghislotti, G
    Nielsen, B
    AsokaKumar, P
    Lynn, KG
    Szeles, C
    Bottani, CE
    Bertoni, S
    Cerofolini, GF
    Meda, L
    THIN SOLID FILMS, 1996, 276 (1-2) : 310 - 313
  • [33] Room temperature visible light emission from Si/SiO2 multilayers:: Roles of interface electronic states and silicon phase
    Ternon, C
    Gourbilleau, F
    Dufour, C
    Doualan, JL
    Garrido, B
    JOURNAL OF LUMINESCENCE, 2002, 99 (04) : 361 - 364
  • [34] Strong red light emission from silicon nanocrystals embedded in SIO2 matrix
    Chen, WD
    Wang, YQ
    Chen, CY
    Diao, HW
    Liao, XB
    Kong, GL
    Hsu, CC
    COMMAD 2002 PROCEEDINGS, 2002, : 267 - 270
  • [35] Effect of carbon implantation on visible luminescence and composition of Si-implanted SiO2 layers
    Tetelbaum, D. I.
    Mikhaylov, A. N.
    Vasiliev, V. K.
    Belov, A. I.
    Kovalev, A. I.
    Wainstein, D. L.
    Mendeleva, Yu. A.
    Finstad, T. G.
    Foss, S.
    Golan, Y.
    Osherov, A.
    SURFACE & COATINGS TECHNOLOGY, 2009, 203 (17-18): : 2658 - 2663
  • [36] Light emission from Si/SiO2 nanostructures
    Sinkkonen, J
    Novikov, S
    Ovchinnikov, V
    Toivola, T
    PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C, 2003, : 2676 - 2681
  • [37] Violet light-emission from Ge+-implanted SiO2 films on Si substrate
    Gao, T
    Bao, XM
    Yan, F
    Tong, S
    Cheb, YJ
    ACTA PHYSICA SINICA-OVERSEAS EDITION, 1997, 6 (06): : 466 - 470
  • [38] Photoelectron emission from implanted SiO2: Se+ films
    A. F. Zatsepin
    E. A. Buntov
    V. S. Kortov
    H. -J. Fitting
    Yu. S. Ponosov
    Bulletin of the Russian Academy of Sciences: Physics, 2010, 74 (2) : 201 - 205
  • [39] 1.54 μm Photoluminescence emission from Er-implanted SiO2 crystal and SiO2 glass
    Li, Shiling
    Fu, Gang
    Ye, Yongkai
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2013, 307 : 434 - 437
  • [40] INFRARED OPTICAL-PROPERTIES OF SIO2 AND SIO2 LAYERS ON SILICON
    PHILIPP, HR
    JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 1053 - 1057
12345