Visible light emission from silicon implanted and annealed SiO2 layers

被引：14
|
作者：
Ghislotti, G
Nielsen, B
AsokaKumar, P
Lynn, KG
DiMauro, LF
Bottani, CE
Corni, F
Tonini, R
Ottaviani, GP
机构：
[1] BROOKHAVEN NATL LAB,DEPT PHYS,UPTON,NY 11973
[2] BROOKHAVEN NATL LAB,DEPT CHEM,UPTON,NY 11973
[3] POLITECN MILAN,DIPARTIMENTO INGN NUCL,I-20133 MILAN,ITALY
[4] UNIV MODENA,DIPARTIMENTO FIS,I-41100 MODENA,ITALY
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1997年 / 144卷 / 06期
关键词：
D O I：
10.1149/1.1837764
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Silicon implanted and annealed SiO2 layers are studied usin g photoluminescence (PL) and positron annihilation spectroscopy (PAS). Two PL emission bands are observed. a band centered at 560 nm is present in as-implanted samples and it is still observed after 1000 degrees C annealing. The emission time is fast. A second band centered at 780 nm is detected after 1000 degrees C annealing. The intensity of the 780 nm band further increased when hydrogen annealing was performed. The emission time is long (1 mu s to 0.2 ms). PAS results show that defects produced by implantation anneal at 600 degrees C. Based on the annealing behavior and on the emission times, the origin of the two bands is discussed.
引用
收藏
页码：2196 / 2199
页数：4
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