Polycrystalline MnGe2 thin films on InAs(001) substrates

被引：2

作者：

Gutierrez-Naranjo, David ^{[1
]}

Holguin-Momaca, Jose T. ^{[1
]}

Solis-Canto, Oscar O. ^{[1
]}

Gupta, Preeti ^{[2
]}

Poddar, Pankaj ^{[2
]}

Espinosa Magana, Francisco ^{[1
]}

Olive-Mendez, Sion F. ^{[1
]}

机构：

[1] Ctr Invest Mat Avanzados SC CIMAV, Av Miguel de Cervantes 120, Chihuahua 31136, Chih, Mexico

[2] Natl Chem Lab, Phys & Mat Chem Div, Dr Homi Bhabha Rd, Pune 411008, Maharashtra, India

来源：

THIN SOLID FILMS | 2018年 / 657卷

关键词：

Manganese germanide; Thin films; Indium arsenide substrates; Ferromagnetism; Sputtering; 14/mcm; TEMPERATURE FERROMAGNETISM; MAGNETIC-PROPERTIES; CLUSTERS;

D O I：

10.1016/j.tsf.2018.05.007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the growth of MnGe2 thin films on InAs(001) substrates using radio frequency-magnetron cosputtering. Polycrystalline thin films were obtained at a substrate temperature of 353 K. X-ray diffractometry was used to identify the tetragonal MnGe2 phase (space group 14/mcm). Measurements of the magnetic field and temperature dependence of the magnetization revealed that the MnGe2 thin films are ferromagnetic with a magnetization of 280 kAm(-1) and a Curie temperature of 62 K. Additionally, an antiferromagnetic component is observed at low temperatures, which may arise atomic disorder at the grain boundaries between MnGe2 crystallites.

引用

页码：38 / 41

页数：4

共 50 条

[41] Reactions between tungsten and molybdenum thin films and polycrystalline diamond substrates
Yeh, JJ
Pfeffer, RL
Cole, MW
Ohring, M
Yehoda, JE
DIAMOND AND RELATED MATERIALS, 1996, 5 (10) : 1195 - 1203
[42] EBSD analysis of the growth of (001) magnetite thin films on MgO substrates
Koblischka-Veneva, A.
Koblischka, M. R.
Murphy, S.
Arora, S. K.
Hartmann, U.
Muecklich, F.
Shvets, I. V.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2007, 144 (1-3): : 64 - 68
[43] THE INTERACTION BETWEEN THIN-FILMS OF COBALT AND GAAS (001) SUBSTRATES
GENUT, M
EIZENBERG, M
JOURNAL OF APPLIED PHYSICS, 1989, 66 (11) : 5456 - 5464
[44] Properties and fracture resistance of thin polycrystalline aluminum films on sapphire substrates
Moody, NR
Medlin, D
Guthrie, S
Hwang, RQ
McCarty, KF
POLYCRYSTALLINE THIN FILMS: STRUCTURE, TEXTURE, PROPERTIES, AND APPLICATIONS II, 1996, 403 : 145 - 150
[45] Structural and Electrical Characteristics of ZnO Thin Films on Polycrystalline AlN Substrates
Jo, Yeon Hwa
Mohanty, Bhaskar Chandra
Cho, Yong Soo
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2009, 92 (03) : 665 - 670
[46] Exchange bias in epitaxial and polycrystalline thin film Ru2MnGe/Fe bilayers
Balluff, Jan
Meinert, Markus
Schmalhorst, Jan-Michael
Reiss, Guenter
Arenholz, Elke
JOURNAL OF APPLIED PHYSICS, 2015, 118 (24)
[47] Anisotropy and dynamic properties of Co2MnGe Heusler thin films
Belmeguenai, M.
Zighem, F.
Woltersdorf, G.
Roussigne, Y.
Cherif, S. M.
Westerholt, K.
Bayreuther, G.
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2009, 321 (07) : 750 - 753
[48] Kelvin probe force microscopy on InAs thin films on (110) GaAs substrates
Takahashi, T
Kawamukai, T
Ono, S
Noda, T
Sakaki, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (6B): : 3721 - 3723
[49] Electrical characterization of thin InAs films grown on patterned W/GaAs substrates
Astromskas, Gvidas
Wallenberg, L. Reine
Wernersson, Lars-Erik
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (05): : 2222 - 2226
[50] Kelvin probe force microscopy on InAs thin films on (110) GaAs substrates
Takahashi, Takuji, 2000, JJAP, Tokyo, Japan (39):

← 1 2 3 4 5 →