ZnO thin film synthesis by reactive radio frequency magnetron sputtering

被引:46
|
作者
Senay, Volkan [1 ]
Pat, Suat [2 ]
Korkmaz, Sadan [2 ]
Aydogmus, Tuna [2 ]
Elmas, Saliha [2 ]
Ozen, Soner [2 ]
Ekem, Naci [2 ]
Balbag, M. Zafer [3 ]
机构
[1] Bayburt Univ, Primary Sci Educ Dept, TR-69000 Bayburt, Turkey
[2] Eskisehir Osmangazi Univ, Dept Phys, TR-26480 Eskisehir, Turkey
[3] Eskisehir Osmangazi Univ, Fac Educ, TR-26480 Eskisehir, Turkey
关键词
ZnO; RF sputtering; Optical properties; Surface properties; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; NANOROD ARRAYS; TEMPERATURE; DEPOSITION;
D O I
10.1016/j.apsusc.2013.10.044
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this study, ZnO thin films were deposited on glass substrates by reactive RF magnetron sputtering method at argon-oxygen gas mixing (1:1) atmosphere. Some properties of the synthesized films were investigated by interferometry, UV-vis spectrophotometer, atomic force microscopy, and tensiometer. Tauc method was adopted to estimate the optical band gaps. The band gaps of the deposited films were affected by film thickness. We concluded that the surface composition plays a substantial role in the values of the band gaps. Nanocrystalline structures were detected in all produced samples. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:2 / 5
页数:4
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