Growth of epitaxial c-plane ZnO film on a-plane sapphire by radio frequency reactive magnetron sputtering

被引：5
|
作者：
Liu, Hongyan [1 ]
Gao, Shuang [1 ]
Zeng, Fei [1 ]
Song, Cheng [1 ]
Pan, Feng [1 ]
机构：
[1] Tsinghua Univ, Key Lab Adv Mat MOE, Sch Mat Sci & Engn, Beijing 100084, Peoples R China
来源：
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2013年 / 7卷 / 08期
基金：
中国国家自然科学基金;
关键词：
epitaxy; ZnO; a -plane sapphire; photoluminescence; DISLOCATIONS;
D O I：
10.1002/pssr.201307197
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this Letter, we report the successful growth of high quality c -plane oriented epitaxial ZnO films on a -plane sapphire substrates by using radio frequency reactive magnetron sputtering. The effect of substrate temperature on the structural and optical properties has been investigated. X-ray diffraction (XRD) studies reveal that the ZnO film is grown epitaxially on a -plane sapphire substrate, and the film quality is improv- ed as the substrate temperature is increased. Photoluminescence (PL) results manifest that screw dislocations can exert great influence on the optical properties. It is found that the line width of the near-band-edge emission of PL decreases linearly with increase in screw density. In addition, a simple and effective method is proposed to assess the defect density in epitaxial ZnO films by performing PL measurement. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：587 / 589
页数：3
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