Avalanche phenomena in 4H-SiC p-n diodes fabricated by aluminum or boron implantation

被引：10
|
作者：
Negoro, Y [1 ]
Miyamoto, N [1 ]
Kimoto, T [1 ]
Matsunami, H [1 ]
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 09期
关键词：
avalanche breakdown; ion implantation; p-n diode; SiC; silicon carbide;
D O I：
10.1109/TED.2002.802637
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Characteristics of p-n junction fabricated by aluminum-ion (Al+) or boron-ion (B+) implantation and high-dose Al+-implantation into 4H-SiC (0001) have been investigated. By the combination of high-dose (4 x 10(15) cm(-2)) Al+ implantation at 500 degreesC and subsequent annealing at 1700 degreesC, a minimum sheet resistance of 3.6 kOmega/square (p-type) has been obtained. Three types of diodes with planar structure were fabricated by employing Al+ or B+ implantation. B+-implanted diodes have shown higher breakdown voltages than Al+-implanted diodes. A SiC p-n diode fabricated by deep B+ implantation has exhibited a high breakdown voltage of 2900 V with a low on-resistance of 8.0 mOmegacm(2) at room temperature. The diodes fabricated in this study showed positive temperature coefficients of breakdown voltage, meaning avalanche breakdown. The avalanche breakdown is discussed with observation of luminescence.
引用
收藏
页码：1505 / 1510
页数：6
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