Observation of an Electric-Field-Induced Band Gap in Bilayer Graphene by Infrared Spectroscopy

被引：518
|
作者：
Mak, Kin Fai [1 ]
Lui, Chun Hung [1 ]
Shan, Jie [2 ]
Heinz, Tony F. [1 ]
机构：
[1] Columbia Univ, Dept Phys & Elect Engn, New York, NY 10027 USA
[2] Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA
来源：
PHYSICAL REVIEW LETTERS | 2009年 / 102卷 / 25期
基金：
美国国家科学基金会;
关键词：
REFRACTIVE INDEX; TRANSISTOR;
D O I：
10.1103/PhysRevLett.102.256405
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
It has been predicted that application of a strong electric field perpendicular to the plane of bilayer graphene can induce a significant band gap. We have measured the optical conductivity of bilayer graphene with an efficient electrolyte top gate for a photon energy range of 0.2-0.7 eV. We see the emergence of new transitions as a band gap opens. A band gap approaching 200 meV is observed when an electric field similar to 1 V/nm is applied, inducing a carrier density of about 10(13) cm(-2). The magnitude of the band gap and the features observed in the infrared conductivity spectra are broadly compatible with calculations within a tight-binding model.
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页数：4
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