Observation of an Electric-Field-Induced Band Gap in Bilayer Graphene by Infrared Spectroscopy

被引：518

作者：

Mak, Kin Fai ^{[1
]}

Lui, Chun Hung ^{[1
]}

Shan, Jie ^{[2
]}

Heinz, Tony F. ^{[1
]}

机构：

[1] Columbia Univ, Dept Phys & Elect Engn, New York, NY 10027 USA

[2] Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 102卷 / 25期

基金：

美国国家科学基金会;

关键词：

REFRACTIVE INDEX; TRANSISTOR;

D O I：

10.1103/PhysRevLett.102.256405

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

It has been predicted that application of a strong electric field perpendicular to the plane of bilayer graphene can induce a significant band gap. We have measured the optical conductivity of bilayer graphene with an efficient electrolyte top gate for a photon energy range of 0.2-0.7 eV. We see the emergence of new transitions as a band gap opens. A band gap approaching 200 meV is observed when an electric field similar to 1 V/nm is applied, inducing a carrier density of about 10(13) cm(-2). The magnitude of the band gap and the features observed in the infrared conductivity spectra are broadly compatible with calculations within a tight-binding model.

引用

页数：4

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