Investigation of length-dependent characteristics of the voltage-induced metal insulator transition in VO2 film devices

被引：39
|
作者：
Yoon, Joonseok [1 ]
Lee, Giyong [1 ]
Park, Changwoo [2 ,3 ]
Mun, Bongjin Simon [4 ,5 ]
Ju, Honglyoul [1 ]
机构：
[1] Yonsei Univ, Dept Phys, Seoul 120749, South Korea
[2] Hanbat Natl Univ, Div Appl Chem & Biotechnol, Taejon 305719, South Korea
[3] Adv Nano Prod, Chungwon 363942, Chungbuk, South Korea
[4] Gwangju Inst Sci & Technol, Dept Phys & Photon Sci, Sch Phys & Chem, Kwangju 500712, South Korea
[5] Gwangju Inst Sci & Technol, Ertl Ctr Electrochem & Catalysis, Kwangju 500712, South Korea
来源：
APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 08期
基金：
新加坡国家研究基金会;
关键词：
MOTT TRANSITION;
D O I：
10.1063/1.4893783
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The characteristics of the voltage-induced metal insulator transition (MIT) of VO2 film devices are investigated as a function of ambient temperature and length. At the onset of voltage-induced MIT, an abrupt formation of a conduction channel is observed within the insulating phase. The carrier density of the device varies with ambient temperature (T-A) and device length (L) across MIT. As the device length is reduced, a statistically random appearance of the conduction channel is observed. Our results suggest that the primary operation principles of the VO2 device can be chosen between Joule heating effect and the electric field effect. (C) 2014 AIP Publishing LLC.
引用
收藏
页数：5
相关论文
共 50 条
  • [41] Metal-insulator phase transition in a VO2 thin film observed with terahertz spectroscopy
    Jepsen, Peter Uhd
    Fischer, Bernd M.
    Thoman, Andreas
    Helm, Hanspeter
    Suh, J. Y.
    Lopez, Rene
    Haglund, R. F., Jr.
    PHYSICAL REVIEW B, 2006, 74 (20)
  • [42] Insulator-metal transition in VO2 film on sapphire studied by broadband dielectric spectroscopy
    Gavdush, Arsenii A.
    Zhelnov, Vladislav A.
    Dolganov, Kirill B.
    Bogutskii, Alexander A.
    Garnov, Sergey V.
    Burdanova, Maria G.
    Ponomarev, Dmitry S.
    Shi, Qiwu
    Zaytsev, Kirill I.
    Komandin, Gennadii A.
    SCIENTIFIC REPORTS, 2025, 15 (01):
  • [43] In situ electronic structural study of VO2 thin film across the metal–insulator transition
    伊明江·买买提
    阿布都艾则孜·阿布来提
    吴蕊
    王嘉鸥
    钱海杰
    奎热西·依布拉欣
    Chinese Physics B, 2013, (12) : 414 - 419
  • [44] Control of the Metal-Insulator Transition in VO2 Epitaxial Film by Modifying Carrier Density
    Chen, F. H.
    Fan, L. L.
    Chen, S.
    Liao, G. M.
    Chen, Y. L.
    Wu, P.
    Song, Li
    Zou, C. W.
    Wu, Z. Y.
    ACS APPLIED MATERIALS & INTERFACES, 2015, 7 (12) : 6875 - 6881
  • [45] METAL-INSULATOR PHASE-TRANSITION IN VO2 - INFLUENCE OF FILM THICKNESS AND SUBSTRATE
    BABKIN, EV
    CHARYEV, AA
    DOLGAREV, AP
    URINOV, HO
    THIN SOLID FILMS, 1987, 150 (01) : 11 - 14
  • [46] Photoluminescence response of colloidal quantum dots on VO2 film across metal to insulator transition
    Kuznetsov, Sergey N.
    Cheremisin, Alexander B.
    Stefanovich, Genrikh B.
    NANOSCALE RESEARCH LETTERS, 2014, 9
  • [47] Metal-insulator transition of monoclinic VO2 thin film without Peierls distortion
    Lin, Tiegui
    Zhang, Yufen
    VACUUM, 2019, 163 : 338 - 341
  • [48] On the triggering mechanism for the metal-insulator transition in thin film VO2 devices: electric field versus thermal effects
    Gopalakrishnan, Gokul
    Ruzmetov, Dmitry
    Ramanathan, Shriram
    JOURNAL OF MATERIALS SCIENCE, 2009, 44 (19) : 5345 - 5353
  • [49] X-ray induced insulator-metal transition in a thin film of electron-doped VO2
    Shibuya, K.
    Okuyama, D.
    Kumai, R.
    Yamasaki, Y.
    Nakao, H.
    Murakami, Y.
    Taguchi, Y.
    Arima, T.
    Kawasaki, M.
    Tokura, Y.
    PHYSICAL REVIEW B, 2011, 84 (16)
  • [50] Identifying the Collective Length in VO2 Metal-Insulator Transitions
    Yajima, Takeaki
    Nishimura, Tomonori
    Toriumi, Akira
    SMALL, 2017, 13 (12)
12345