Investigation of length-dependent characteristics of the voltage-induced metal insulator transition in VO2 film devices

被引：39

作者：

Yoon, Joonseok ^{[1
]}

Lee, Giyong ^{[1
]}

Park, Changwoo ^{[2
,3
]}

Mun, Bongjin Simon ^{[4
,5
]}

Ju, Honglyoul ^{[1
]}

机构：

[1] Yonsei Univ, Dept Phys, Seoul 120749, South Korea

[2] Hanbat Natl Univ, Div Appl Chem & Biotechnol, Taejon 305719, South Korea

[3] Adv Nano Prod, Chungwon 363942, Chungbuk, South Korea

[4] Gwangju Inst Sci & Technol, Dept Phys & Photon Sci, Sch Phys & Chem, Kwangju 500712, South Korea

[5] Gwangju Inst Sci & Technol, Ertl Ctr Electrochem & Catalysis, Kwangju 500712, South Korea

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

MOTT TRANSITION;

D O I：

10.1063/1.4893783

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The characteristics of the voltage-induced metal insulator transition (MIT) of VO2 film devices are investigated as a function of ambient temperature and length. At the onset of voltage-induced MIT, an abrupt formation of a conduction channel is observed within the insulating phase. The carrier density of the device varies with ambient temperature (T-A) and device length (L) across MIT. As the device length is reduced, a statistically random appearance of the conduction channel is observed. Our results suggest that the primary operation principles of the VO2 device can be chosen between Joule heating effect and the electric field effect. (C) 2014 AIP Publishing LLC.

引用

页数：5

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