Theory of scanning capacitance microscopy

被引：7
|
作者：
Balagurov, DB [1 ]
Klyuchnik, AV [1 ]
Lozovik, YE [1 ]
机构：
[1] Russian Acad Sci, Inst Spect, Troitsk 142092, Moscow Oblast, Russia
来源：
PHYSICS OF THE SOLID STATE | 2000年 / 42卷 / 02期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/1.1131215
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The theory of scanning capacitance microscopy (SCM), used in the examination of a two-dimensional distribution of irregularities in films arranged over metallic substrates, as well as of reliefs of conductive surfaces, is discussed. A realistic model of SCM, which is solvable analytically, is proposed. An explicit solution of the inverse problem of irregularities relief reconstruction (IRR) in SCM is obtained. The possible effects resulting from exciting of free oscillations in the "film-stylus" system of a sonde microscope are analyzed in detail. (C) 2000 MAIK "Nauka /Interperiodica".
引用
收藏
页码：371 / 376
页数：6
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