Flexible nonvolatile memory transistors using indium gallium zinc oxide-channel and ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) fabricated on elastomer substrate

The authors demonstrated flexible memory thin-film transistors (MTFTs) with organic ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) and an amorphous oxide semiconducting indium gallium zinc oxide channel on the elastomer substrates. The carrier mobility, memory on/off ratio, and subthreshold swing of the flexible MTFTs showed 21 cm(2)V(-1)s(-1), 10(7), and 0.5-1V/decade, respectively. The memory window of 13V at +/- 20V programming was confirmed for the device without any interface layer. These obtained values did not significantly change when the substrate was bent with a radius of curvature of 10mm. The memory on/off ratio was initially 5 x 10(4) and maintained at 10(2) even after a lapse of 3600 s. The fabricated MTFTs exhibited encouraging characteristics on the elastomer that are sufficient to realize mechanically flexible nonvolatile memory devices. (C) 2015 American Vacuum Society.