Stable Ferroelectric Poly(Vinylidene Fluoride-Trifluoroethylene) Film for Flexible Nonvolatile Memory Application

被引：17

作者：

Kim, Woo Young ^{[1
]}

Lee, Hee Chul ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 02期

关键词：

Ferroelectric; flexible electronics; flexible memory; surface roughness;

D O I：

10.1109/LED.2011.2176910

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a formation method for uniform ferroelectric polymer thin film on very rough aluminum foil is introduced, and the performance characteristics of the film are characterized by hysteresis measurements. For a bending radius of 0.6 cm, the remanent polarization, coercive field and internal bias field are equal in a flat state. After bending 500 times repetitively with a bending radius of 1.1 cm, its performance was nearly constant. Therefore, the method proposed in this letter can be useful for the fabrication of high-quality flexible memory devices on a flexible and rough substrate.

引用

页码：260 / 262

页数：3

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