Bending characteristics of ferroelectric poly(vinylidene fluoride trifluoroethylene) capacitors fabricated on flexible polyethylene naphthalate substrate

被引:15
|
作者
Yoon, Sung-Min [1 ]
Jung, Soon-Won [2 ]
Yang, Shinhyuk [2 ]
Park, Sang-Hee Ko [2 ]
Yu, Byoung-Gon [2 ]
Ishiwara, Hiroshi [3 ,4 ]
机构
[1] Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi Do, South Korea
[2] Elect & Telecommun Res Inst, Convergence Components & Mat Res Lab, Taejon 305700, South Korea
[3] Tokyo Inst Technol, Midori Ku, Yokohama, Kanagawa 2268502, Japan
[4] Konkuk Univ, Dept Phys, Seoul 143701, South Korea
关键词
Ferroelectric capacitor; Plastic substrate; P(VDF-TrFE); Flexible memory; ORGANIC NONVOLATILE MEMORY; LARGE-AREA; TRANSISTORS; VOLTAGE; DEVICES;
D O I
10.1016/j.cap.2011.03.011
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ferroelectric capacitors using poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] were fabricated on the plastic polyethylene naphthalate (PEN) substrate for the various applications of flexible-type nonvolatile memories. It was successfully confirmed that the Au/P(VDF-TrFE)/Au capacitors showed sound ferroelectric characteristics even when they were fabricated using a lithography-compatible patterning process at low temperature below 150 degrees C in the PEN. The behaviors of ferroelectric polarization and saturation as a function of the applied electric field were not so sensitive to the changes in bending curvature radius. However, because small variations in switching properties for the polarization reversal were also observed especially for higher frequency and lower voltage regions, suitable operation schemes should be designed for the flexible memory devices with lower voltage and higher speed operations even at bending situations. (C) 2011 Published by Elsevier B.V.
引用
收藏
页码:S219 / S224
页数:6
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