In situ analysis of epitaxial cobalt silicide reaction on silicon (001)

被引：6
|
作者：
Sakamoto, K [1 ]
Maeda, T [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
来源：
VACUUM | 2004年 / 73卷 / 3-4期
关键词：
salicide; silicon; cobalt silicide; oxide mediated epitaxy; RHEED; SOI; MOSFET;
D O I：
10.1016/j.vacuum.2003.12.075
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Formation process of CoSi2 on Si(001) was investigated with in situ reflection high-energy electron diffraction analysis for developing a self-aligned silicide (salicide) process of advanced silicon transistors. A thin Co layer deposited onto a wet chemically oxidized Si(001) surface silicided at 550degreesC to form epitaxial CoSi2(001) without developing polycrystalline subsilicide phase. The oxide remained on the surface up to 750 C and kept the surface flat until its evaporation. It was thus revealed that chemically formed thin oxide on Si(001) surface is an effective reaction control layer that acts as a reaction barrier to Co/Si subsilicide formation and as a kinematical barrier to surface migration of growing species. These conditions are necessary for fabricating flat and thin epitaxial CoSi2 layers. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：595 / 601
页数：7
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