Wafer Level Recombination Carrier Lifetime Measurements of 4H-SiC PiN Epitaxial Wafers

被引：2

作者：

Chung, G. ^{[1
]}

Loboda, M. J. ^{[1
]}

MacMillan, M. F. ^{[1
]}

Wan, J. W. ^{[1
]}

机构：

[1] Dow Corning Compound Semicond Solut LLC, Midland, MI 48611 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2008 | 2009年 / 615-617卷

关键词：

recombination lifetime; 4H-SiC; PiN structure; microwave microwave-PCD; HCl gas etching; disruptive growth; DIODES;

D O I：

10.4028/www.scientific.net/MSF.615-617.287

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Effective recombination lifetimes of 4H-SiC PiN epitaxy wafers are measured by mu-PCD (microwave photoconductive decay) system at wafer level. Lifetimes measured in presence and absence of the p(+) layer show lower lifetime values with p(+) layer present. This is attributed to high recombination rate at p(+)/n(-) interface. Lifetimes at various buffer thicknesses show lower values at the buffer layer of about 50 mu m due to high interface recombination rate resulting from rougher surface of the buffer layer. Lifetimes of PiN wafers from interrupted and Continuous p+/n- growth are very comparable.

引用

页码：287 / 290

页数：4

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