Strain profiles and crystallographic defects in 6H SiC implanted with 2 MeV As ions

被引：0
|
作者：
Wierzchowski, Wojciech K. [1 ]
Wieteska, Krzysztof [2 ]
Turos, Andrzej [1 ,3 ]
Graeff, Walter [4 ]
Groetzschel, Rainer [5 ]
Stonnert, Anna [3 ]
Ratajczak, Renata [3 ]
机构：
[1] Inst Elect Mat Technol, PL-01919 Warsaw, Poland
[2] Inst Atom Energy, PL-05400 Otwock, Poland
[3] Andrzej Soltan Inst Nucl Studies, PL-05400 Otwock, Poland
[4] DESY, HASYLAB, D-22603 Hamburg, Germany
[5] Rossendorf Res Ctr, D-01314 Dresden, Germany
来源：
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES | 2008年 / 64卷
关键词：
silicon carbide; ion implantation; X-ray strain determination;
D O I：
10.1107/S0108767308080744
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
P17.04.08
引用
收藏
页码：C599 / C599
页数：1
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