Photoluminescence and backscattering characterization of 6H SiC implanted with erbium and oxygen ions

被引：3
|
作者：
Kozanecki, A
Jeynes, C
Sealy, BJ
Jantsch, W
Lanzerstorfer, S
Heiss, W
Prechtl, G
机构：
[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[2] Univ Surrey, Surrey Ctr Res Ion Beam Applicat, Guildford GU2 5XH, Surrey, England
[3] Johannes Kepler Univ, Inst Halbleiterphys, A-4040 Linz, Austria
来源：
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷
关键词：
erbium centres; ion implantation; photoluminescence; RBS;
D O I：
10.4028/www.scientific.net/MSF.264-268.501
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
6H SiC samples implanted with Er and Er+O are characterized with photoluminescence (PL) and Rutherford backscattering and channeling. For low doses of Er perfect recrystallization is achieved already at 1300-1350 degrees C, whereas at 1500 degrees C the surface decomposes and the formation of complex defects takes place. PL due to the I-4(13/2) - 4I(15/2) transitions of Er3+ is studied by means of high resolution Fourier-transform spectroscopy. It is found that coimplantation of oxygen into 6H SiC:Er does not introduce new Er-related emissions. It is suggested that O may be involved in the structure of ail emitting Er-centres.
引用
收藏
页码：501 / 504
页数：4
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