Long-Wavelength GaInNAs Vertical-Cavity Surface-Emitting Laser With Buried Tunnel Junction

被引：19

作者：

Onishi, Yutaka ^{[1
]}

Saga, Nobuhiro ^{[2
]}

Koyama, Kenji ^{[1
]}

Doi, Hideyuki ^{[2
]}

Ishizuka, Takashi ^{[2
]}

Yamada, Takashi ^{[1
]}

Fujii, Kosuke ^{[1
]}

Mori, Hiroki ^{[2
]}

Hashimoto, Jun-ichi ^{[1
]}

Shimazu, Mitsuru ^{[2
]}

Yamaguchi, Akira ^{[2
]}

Katsuyama, Tsukuru ^{[1
]}

机构：

[1] Sumitomo Elect Ind Ltd, Transmiss Devices R&D Labs, Yokohama, Kanagawa 2448588, Japan

[2] Sumitomo Elect Ind Ltd, Semicond Technol R&D Labs, Itami, Hyogo 6640016, Japan

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2009年 / 15卷 / 03期

关键词：

GaInNAs; long wavelength (LW); tunnel junction; vertical-cavity surface-emitting laser (VCSEL); RESISTANCE; OPERATION; INP;

D O I：

10.1109/JSTQE.2008.2011495

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A long-wavelength GaInNAs vertical-cavity surface-emitting laser with a buried tunnel junction (BTJ) has been demonstrated in this paper. It has been shown that a combination of a GaAs-based BTJ for a current confinement, GaInNAs multi-quantum wells for an active region, a dielectric distributed Bragg reflector (DBR) for a top mirror, and an AlGaAs/GaAs DBR for a bottom mirror is desirable to realize high-speed operation at high temperature. The maximum output power of 4.2 mW with a low resistance of 65 Omega has been obtained at 25 degrees C. Operations of 10 Gb/s have been achieved over the temperature range of 25 degrees C-85 degrees C, with operation current of 6.9 mA and extinction ratio of 5.0 dB.

引用

页码：838 / 843

页数：6

共 50 条

[31] Long-wavelength monolithic GaInNAs vertical-cavity optical amplifiers
Clark, AH
Calvez, S
Laurand, N
Macaluso, R
Sun, HD
Dawson, MD
Jouhti, T
Kontinnen, J
Pessa, M
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2004, 40 (07) : 878 - 883
[32] Scaling effects on the dynamic characteristics of long-wavelength vertical-cavity surface-emitting lasers (VCSELs)
Yap, David F. W.
Koh, S. P.
Tiong, S. K.
OPTICS AND LASER TECHNOLOGY, 2008, 40 (06): : 785 - 789
[33] Buried heterostructure vertical-cavity surface-emitting laser with semiconductor mirrors
Zhao, G.
Zhang, Y.
Deppe, D. G.
Konthasinghe, K.
Muller, A.
APPLIED PHYSICS LETTERS, 2012, 101 (10)
[34] Turn-on delay and Auger recombination in long-wavelength vertical-cavity surface-emitting lasers
Volet, N.
Kapon, E.
APPLIED PHYSICS LETTERS, 2010, 97 (13)
[35] Turn-on delay and Auger recombination in long-wavelength vertical-cavity surface-emitting lasers
Volet, N.
Kapon, E.
SEMICONDUCTOR LASERS AND LASER DYNAMICS IV, 2010, 7720
[36] Long-wavelength MEMS tunable vertical-cavity surface-emitting lasers with high sidemode suppression
Koegel, B.
Maute, M.
Halbritter, H.
Riemenschneider, F.
Boehm, G.
Amann, M-C
Meissner, P.
JOURNAL OF OPTICS A-PURE AND APPLIED OPTICS, 2006, 8 (07): : S370 - S376
[37] Gas phase chemical analysis using long-wavelength vertical-cavity surface-emitting lasers
Lytkine, A
Jager, W
Tulip, J
OPTICAL ENGINEERING, 2006, 45 (04)
[38] Long-wavelength MQW vertical-cavity surface emitting laser: Effects of lattice temperature
Menon P.S.
Kumarajah K.
Ismail M.
Majlis B.Y.M.
Shaari S.
Journal of Optical Communications, 2010, 31 (02) : 81 - 84
[39] Buried-heterostructure long-wavelength vertical-cavity surface-emitting lasers with InGaAsP/InP-GaAs/AlAs DBRs
Ohiso, Y
Iga, R
Kishi, K
Amano, C
ELECTRONICS LETTERS, 2000, 36 (01) : 39 - 40
[40] Tunnel-junction-connected distributed-feedback vertical-cavity surface-emitting laser
Wayne State Univ, Detroit, United States
Appl Phys Lett, 11 (1475-1477):

← 1 2 3 4 5 →