Long-Wavelength GaInNAs Vertical-Cavity Surface-Emitting Laser With Buried Tunnel Junction

被引：19
|
作者：
Onishi, Yutaka [1 ]
Saga, Nobuhiro [2 ]
Koyama, Kenji [1 ]
Doi, Hideyuki [2 ]
Ishizuka, Takashi [2 ]
Yamada, Takashi [1 ]
Fujii, Kosuke [1 ]
Mori, Hiroki [2 ]
Hashimoto, Jun-ichi [1 ]
Shimazu, Mitsuru [2 ]
Yamaguchi, Akira [2 ]
Katsuyama, Tsukuru [1 ]
机构：
[1] Sumitomo Elect Ind Ltd, Transmiss Devices R&D Labs, Yokohama, Kanagawa 2448588, Japan
[2] Sumitomo Elect Ind Ltd, Semicond Technol R&D Labs, Itami, Hyogo 6640016, Japan
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2009年 / 15卷 / 03期
关键词：
GaInNAs; long wavelength (LW); tunnel junction; vertical-cavity surface-emitting laser (VCSEL); RESISTANCE; OPERATION; INP;
D O I：
10.1109/JSTQE.2008.2011495
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A long-wavelength GaInNAs vertical-cavity surface-emitting laser with a buried tunnel junction (BTJ) has been demonstrated in this paper. It has been shown that a combination of a GaAs-based BTJ for a current confinement, GaInNAs multi-quantum wells for an active region, a dielectric distributed Bragg reflector (DBR) for a top mirror, and an AlGaAs/GaAs DBR for a bottom mirror is desirable to realize high-speed operation at high temperature. The maximum output power of 4.2 mW with a low resistance of 65 Omega has been obtained at 25 degrees C. Operations of 10 Gb/s have been achieved over the temperature range of 25 degrees C-85 degrees C, with operation current of 6.9 mA and extinction ratio of 5.0 dB.
引用
收藏
页码：838 / 843
页数：6
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