Surface and interface of GaAs/Sl-GaAs structures investigated by photoreflectance spectroscopy

被引：3

作者：

Jezierski, K ^{[1
]}

Sitarek, P ^{[1
]}

Misiewicz, J ^{[1
]}

Panek, M ^{[1
]}

Sciana, B ^{[1
]}

Korbutowicz, R ^{[1
]}

Tlaczala, M ^{[1
]}

机构：

[1] WROCLAW TECH UNIV,INST ELECTRON TECHNOL,PL-50370 WROCLAW,POLAND

来源：

VACUUM | 1997年 / 48卷 / 3-4期

关键词：

D O I：

10.1016/S0042-207X(96)00273-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial layers of GaAs were grown by MOCVD technique on SI-GaAs substrates. Photoreflectance (PR) spectra were measured at room temperature for energies in the vicinity of the E(0) critical point for p-type as well as n-type doped GaAs/SI-GaAs structures. Two experimental methods for the further investigation of the obtained PR spectra were proposed. The first method was based on the gradual chemical etching of the doped epilayer, the second on the PR measurements carried out for different wavelengths of the laser pump beam. Depending on the doping concentration, the existence of two PR subsignals was observed: the first arises from the surface space charge region, the second from the interface region. In the computational analysis of measured PR spectra Kramers-Kronig analysis of the complex photoreflectance function was applied. (C) 1997 Elsevier Science Ltd.

引用

页码：277 / 282

页数：6

共 50 条

[31] Photoreflectance of GaAs structures with a Mn δ-doped layer
O. S. Komkov
R. V. Dokichev
A. V. Kudrin
Yu. A. Danilov
Technical Physics Letters, 2013, 39 : 1008 - 1011
[32] PHOTOREFLECTANCE SPECTROSCOPY OF GaAs-AlAs MULTIPLE QUANTUM WELL STRUCTURES.
Yinsheng, Tang
Desheng, Jiang
Hongwai Yanjiu, A-ji/Chinese Journal of Infrared Research A, 1988, 7 A (03): : 195 - 199
[33] Photoreflectance of GaAs structures with a Mn δ-doped layer
Komkov, O. S.
Dokichev, R. V.
Kudrin, A. V.
Danilov, Yu. A.
TECHNICAL PHYSICS LETTERS, 2013, 39 (11) : 1008 - 1011
[34] Ge/GaAs(001) interface formation investigated by reflectance anisotropy spectroscopy
Emiliani, V
Shkretii, AI
Goletti, C
Frisch, AM
Fimland, BO
Esser, N
Richter, W
PHYSICAL REVIEW B, 1999, 59 (16) : 10657 - 10661
[35] TRANSIENT ELLIPSOMETRIC SURFACE PHOTOREFLECTANCE APPLIED TO GAAS
FRANKEL, MY
CARRUTHERS, TF
APPLIED PHYSICS LETTERS, 1994, 64 (15) : 1950 - 1952
[36] Hydrogen effects on ZnSe/GaAs interface: A photoreflectance study
Sim, ED
Song, JH
Chang, SK
Kim, HK
APPLIED PHYSICS LETTERS, 2000, 77 (07) : 993 - 995
[37] AlGaAs/GaAs two-dimensional electron gas structures studied by photoreflectance spectroscopy
Guillén-Cervantes, A
Rivera-Alvarez, Z
Hernández, F
Huerta, J
Méndez-García, VH
Lastras-Martínez, A
Zamora, L
Saucedo, N
Meléndez-Lira, M
López-López, M
REVISTA MEXICANA DE FISICA, 2001, 47 (06) : 548 - 552
[38] Quantum Hall effect devices based on AlGaAs/GaAs structures studied by photoreflectance spectroscopy
Zamora-Peredo, L
López-López, M
Rivera, Z
Guillén, A
Rodríguez-Váquez, AG
Ramírez-Flores, G
Lastras-Martínez, A
Méndez-García, VH
APPLIED SURFACE SCIENCE, 2004, 238 (1-4) : 204 - 208
[39] Photoreflectance study of the substrate-film interface of GaAs homoepitaxial structures with different in situ substrate surface cleaning processes
LopezLopez, M
MelendezLira, M
Goto, S
APPLIED PHYSICS LETTERS, 1997, 71 (03) : 338 - 340
[40] Semiconductor heterostructures and device structures investigated by photoreflectance spectroscopy
Misiewicz, Jan
Sitarek, Piotr
Sek, Grzegorz
Kudrawiec, Robert
Materials Science- Poland, 2003, 21 (03): : 263 - 320

← 1 2 3 4 5 →