High-power quantum-dot lasers at 1100 nm

被引：85
|
作者：
Heinrichsdorff, F [1 ]
Ribbat, C [1 ]
Grundmann, M [1 ]
Bimberg, D [1 ]
机构：
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 05期
关键词：
D O I：
10.1063/1.125816
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High-power semiconductor laser diodes based on multiple InGaAs/GaAs quantum-dot layers grown by metal-organic chemical-vapor deposition are demonstrated. The devices exhibit a peak power of 3 W (4.5 W) at 1100 nm (1068 nm), respectively, during pulsed operation at room temperature and show slope efficiencies of 57% (66%). (C) 2000 American Institute of Physics. [S0003-6951(00)01205-5].
引用
收藏
页码：556 / 558
页数：3
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