High-power quantum-dot lasers at 1100 nm

被引：85

作者：

Heinrichsdorff, F ^{[1
]}

Ribbat, C ^{[1
]}

Grundmann, M ^{[1
]}

Bimberg, D ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 05期

关键词：

D O I：

10.1063/1.125816

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-power semiconductor laser diodes based on multiple InGaAs/GaAs quantum-dot layers grown by metal-organic chemical-vapor deposition are demonstrated. The devices exhibit a peak power of 3 W (4.5 W) at 1100 nm (1068 nm), respectively, during pulsed operation at room temperature and show slope efficiencies of 57% (66%). (C) 2000 American Institute of Physics. [S0003-6951(00)01205-5].

引用

页码：556 / 558

页数：3

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