Investigation on Thin Gate Oxide Behavior for CMOS Devices

被引：0

作者：

Liu, Mingyuan ^{[1
]}

He, Yonggen ^{[1
]}

Hung, Albert ^{[1
]}

Liu, Yunzhen ^{[1
]}

Liu, Bingwu ^{[1
]}

Zhou, Dibao ^{[1
]}

Zheng, Kai ^{[1
]}

Liu, Jinghua ^{[1
]}

Ju, Jianhua ^{[1
]}

机构：

[1] Semicond Mfg Int Co Ltd, Log Dev Ctr, Beijing, Peoples R China

来源：

2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4 | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The thin gate dielectric behavior for CMOS devices was investigated. The linear correlation of thickness measured by optical and XPS can still work for ultrathin gate oxide with thickness less than 10 angstrom. Electrical properties, including EOT, NBTI, mobility and Ion-loff, were strongly correlated with nitrogen concentration within oxide and the oxide thickness measured by XPS. It is the purpose of this work to develop methods for improving the device performance through -optimization of the thickness and nitrogen dose of the thin gate dielectric layer.

引用

页码：1154 / 1157

页数：4

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