Theoretical analysis of high-field transport in graphene on a substrate

被引:35
|
作者
Serov, Andrey Y. [1 ,2 ]
Ong, Zhun-Yong [3 ]
Fischetti, Massimo V. [3 ]
Pop, Eric [1 ,2 ,4 ]
机构
[1] Univ Illinois, Urbana, IL 61801 USA
[2] Univ Illinois, Micro & Nanotechnol Lab, Urbana, IL 61801 USA
[3] Univ Texas Dallas, Richardson, TX 75080 USA
[4] Stanford Univ, Stanford, CA 94305 USA
基金
美国国家科学基金会;
关键词
THERMAL-CONDUCTIVITY; STRAINED-SILICON; PERFORMANCE; SCATTERING; MONOLAYER;
D O I
10.1063/1.4884614
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigate transport in graphene supported on various dielectrics (SiO2, BN, Al2O3, and HfO2) through a hydrodynamic model which includes self-heating and thermal coupling to the substrate, scattering with ionized impurities, graphene phonons, and dynamically screened interfacial plasmon-phonon (IPP) modes. We uncover that while low-field transport is largely determined by impurity scattering, high-field transport is defined by scattering with dielectric-induced IPP modes, and a smaller contribution of graphene intrinsic phonons. We also find that lattice heating can lead to negative differential drift velocity (with respect to the electric field), which can be controlled by changing the underlying dielectric thermal properties or thickness. Graphene on BN exhibits the largest high-field drift velocity, while graphene on HfO2 has the lowest one due to strong influence of IPP modes. (C) 2014 AIP Publishing LLC.
引用
收藏
页数:9
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