Comparison between trap and self-heating induced mobility degradation in AlGaN/GaN HEMTs

被引：9

作者：

Kalavagunta, Aditya ^{[1
]}

Mukherjee, Shubhajit ^{[2
]}

Reed, Robert ^{[2
]}

Schrimpf, R. D. ^{[2
]}

机构：

[1] Comsol Inc, Los Angeles, CA 90024 USA

[2] Vanderbilt Univ, Nashville, TN 37235 USA

来源：

MICROELECTRONICS RELIABILITY | 2014年 / 54卷 / 03期

关键词：

ELECTRON; TRANSISTORS; SIMULATION; FIELD;

D O I：

10.1016/j.microrel.2013.10.018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Mobility degradation due to scattering from radiation-induced defects is compared to that produced by self-heating in proton-irradiated AlGaN/GaN HEMTs using experiments and simulations. After irradiation, the mobility in the 2DEG is limited by scattering from charged traps and is temperature-limited near the gate-drain access region. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：570 / 574

页数：5

共 50 条

[21] Fast Model Generation for AlGaN/GaN HEMTs with the Consideration of Self-heating and Charge Trapping Effects
Huang, Andong
Zhong, Zheng
Guo, Yongxin
Wu, Wen
[J]. 2016 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS (IMWS-AMP), 2016,
[22] Investigation of the nanochannel geometry modulation on self-heating in AlGaN/GaN Fin-HEMTs on Si
Wu, Mei
Ma, Xiao-Hua
Yang, Ling
Zhang, Meng
Zhu, Qing
Zhang, Xin-Chuang
Hou, Bin
Zheng, Xue-Feng
Hao, Yue
[J]. APPLIED PHYSICS LETTERS, 2019, 115 (08)
[23] Modeling of Self-Heating for AlGaN/GaN HEMT with Thermal Conductivity Degradation Effect
Arivazhagan, L.
Nirmal, D.
Ajayan, J.
Godfrey, D.
Rakkumar, J. S.
Lakshmi, S. Bhagya
[J]. SECOND INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE, SMART STRUCTURES AND APPLICATIONS (ICMSS-2019), 2019, 2201
[24] Effects of Self-Heating on Performance Degradation in AlGaN/GaN-Based Devices
Benbakhti, Brahim
Soltani, Ali
Kalna, Karol
Rousseau, Michel
De Jaeger, Jean-Claude
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (10) : 2178 - 2185
[25] Self Heating of AlGaN/GaN HEMTs in Pulsed Operation
Weatherford, T.
Wang, Y.
Tracey, S.
[J]. 2009 ROCS WORKSHOP, PROCEEDINGS, 2009, : 59 - 69
[26] Is self-heating responsible for the current collapse in GaN HEMTs?
Padmanabhan, Balaji
Vasileska, Dragica
Goodnick, Stephen M.
[J]. JOURNAL OF COMPUTATIONAL ELECTRONICS, 2012, 11 (01) : 129 - 136
[27] Is self-heating responsible for the current collapse in GaN HEMTs?
Balaji Padmanabhan
Dragica Vasileska
Stephen M. Goodnick
[J]. Journal of Computational Electronics, 2012, 11 : 129 - 136
[28] Investigation of self-heating effects in submicrometer GaN/AlGaN HEMTs using an electrothermal Monte Carlo method
Sadi, Toufik
Kelsall, Robert W.
Pilgrim, Neil J.
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (12) : 2892 - 2900
[29] The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs
Wang, Xiao-Dong
Hu, Wei-Da
Chen, Xiao-Shuang
Lu, Wei
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (05) : 1393 - 1401
[30] Numerical simulation and compact modelling of AlGaN/GaN HEMTs with mitigation of self-heating effects by substrate materials
Rodriguez, Raul
Gonzalez, Benito
Garcia, Javier
Yigletu, Fetene M.
Tirado, Jose M.
Iniguez, Benjamin
Nunez, Antonio
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2015, 212 (05): : 1130 - 1136

← 1 2 3 4 5 →