High Detection Efficiency InGaAs/InP Single Photon Avalanche Photodiodes

被引：0
|
作者：
Gu, Yonglin [1 ]
Wu, Xiucheng [2 ]
Choa, Fow-Sen [1 ]
机构：
[1] Univ Maryland Baltimore Cty, Dept CSEE, Baltimore, MD 21250 USA
[2] Adtech Opt, City of Industry, CA 91748 USA
来源：
2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) | 2009年
关键词：
D O I：
10.1109/ICIPRM.2009.5012462
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InGaAs/InP avalanche photodiodes with high detection efficiency at 1.55 mu m is reported in Geiger mode for single photon detection. In addition, mechanisms to improve device dark count rate versus photon detection efficiency performance are reported.
引用
收藏
页码：146 / +
页数：2
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