Measurement of minority carrier lifetime in epitaxial silicon layers

被引：0
|
作者：
Kitamura, T [1 ]
Tamura, F [1 ]
Hara, T [1 ]
Hourai, M [1 ]
Tsuya, H [1 ]
机构：
[1] HOSEI UNIV,KOGANEI,TOKYO 184,JAPAN
来源：
PROCEEDINGS OF THE FOURTH INTERNATIONAL SYMPOSIUM ON HIGH PURITY SILICON | 1996年 / 96卷 / 13期
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D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：533 / 543
页数：11
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