Gate-all-around transistors stack up

被引：7
|
作者：
Thomas, Stuart
机构：
[1] Nature Electronics,
来源：
NATURE ELECTRONICS | 2020年 / 3卷 / 12期
关键词：
D O I：
10.1038/s41928-020-00517-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：728 / 728
页数：1
相关论文
共 50 条
  • [1] Gate-all-around transistors stack up
    Stuart Thomas
    [J]. Nature Electronics, 2020, 3 : 728 - 728
  • [2] The next generation of gate-all-around transistors
    Lishu Wu
    [J]. Nature Electronics, 2023, 6 : 469 - 469
  • [3] The next generation of gate-all-around transistors
    Wu, Lishu
    [J]. NATURE ELECTRONICS, 2023, 6 (07) : 469 - 469
  • [4] Modeling of gate leakage in cylindrical gate-all-around transistors
    Ravi Solanki
    Saniya Minase
    Ashutosh Mahajan
    Rajendra Patrikar
    [J]. Journal of Computational Electronics, 2021, 20 : 1694 - 1701
  • [5] Modeling of gate leakage in cylindrical gate-all-around transistors
    Solanki, Ravi
    Minase, Saniya
    Mahajan, Ashutosh
    Patrikar, Rajendra
    [J]. JOURNAL OF COMPUTATIONAL ELECTRONICS, 2021, 20 (05) : 1694 - 1701
  • [6] A Study Of Gate-All-Around Transistors By Electron Tomography
    Cherns, P. D.
    Lorut, F.
    Becu, S.
    Dupre, C.
    Tachi, K.
    Cooper, D.
    Chabli, A.
    Ernst, T.
    [J]. FRONTIERS OF CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2009, 2009, 1173 : 290 - +
  • [7] Electron Tomography of Gate-All-Around Nanowire Transistors
    Cherns, P. D.
    Lorut, F.
    Dupre, C.
    Tachi, K.
    Cooper, D.
    Chabli, A.
    Ernst, T.
    [J]. 16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS, 2010, 209
  • [8] Electrical characterization of gate stack charge traps in floating body gate-all-around field-effect-transistors
    Nguyen, Manh-Cuong
    Nguyen, An Hoang-Thuy
    Yim, Jiyong
    Nguyen, Anh-Duy
    Kim, Mingyu
    Kim, Jeonghan
    Beak, Jongyeon
    Choi, Rino
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2021, 39 (03):
  • [9] Thermal consideration in nanoscale gate-all-around vertical transistors
    Larrieu, Guilhem
    Rezgui, Houssem
    Kumar, Abhishek
    Muller, Jonas
    Pelloquin, Sylvain
    Wang, Yifan
    Deng, Marina
    Lecestre, Aurelie
    Maneux, Cristell
    Mukherjee, Chhandak
    [J]. 2023 SILICON NANOELECTRONICS WORKSHOP, SNW, 2023, : 27 - 28
  • [10] Realization of Vertical Ge nanowires for Gate-All-Around transistors
    Liu, M.
    Mertens, K.
    Glass, S.
    Mantl, S.
    Buca, D.
    Zhao, Q. T.
    Trellenkamp, S.
    [J]. 2018 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS), 2018, : 209 - 212
12345