Prediction of Channel Thermal Noise in Twin Silicon Nanowire MOSFET (TSNWFET)

被引：0

作者：

Lee, Jaehong ^{[1
]}

Jeon, Jongwook ^{[1
]}

Kim, Junsoo ^{[1
]}

Park, Byung-Gook ^{[1
]}

Lee, Jong Duk ^{[1
]}

Shin, Hyungcheol ^{[1
]}

机构：

[1] Seoul Natl Univ, Nano Syst Inst, Interuniv Semicond Res Ctr ISRC, Sch Elect Engn, Seoul 151742, South Korea

来源：

2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4 | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, channel thermal noise in the twin silicon nanowire MOSFET (TSNWFET) is predicted using analytic thermal noise model taking into account short channel effects. TSNWFET used in this work has 40 nm gate length, 5 nm radius of silicon wire, and the 3.5 nm of gate oxide. Predicted thermal noise is compared with that of the planar MOSFET using various processes.

引用

页码：61 / 63

页数：3

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