New developments in gallium doped zinc oxide deposited on polymeric substrates by RF magnetron sputtering

被引：58

作者：

Fortunato, E ^{[1
]}

Gonçalves, A

Marques, A

Viana, A

Aguas, H

Pereira, L

Ferreira, I

Vilarinho, P

Martins, R

机构：

[1] Univ Nova Lisboa, Fac Sci & Technol, CENIMAT, Dept Mat Sci, P-2829516 Caparica, Portugal

[2] Univ Nova Lisboa, CEMOP, P-2829516 Caparica, Portugal

[3] Univ Lisbon, Fac Sci, SPM Lab, P-1794016 Lisbon, Portugal

[4] Univ Aveiro, CICECO, Dept Ceram & Glass Engn, P-3810193 Aveiro, Portugal

来源：

SURFACE & COATINGS TECHNOLOGY | 2004年 / 180卷

关键词：

gallium; zinc oxide; thin film; r.f. magnetron sputtering; transparent conductive oxide; polymeric substrates;

D O I：

10.1016/j.surfcoat.2003.10.025

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Gallium-doped zinc oxide (GZO) thin films have been deposited onto polyethylene naphthalate (PEN) substrates by r.f. magnetron sputtering at room temperature. The influence of the film thickness (from 70 to 890 nm) on the electrical, structural and morphological properties are presented. The lowest resistivity obtained was 5 x 10(-4) Omega cm with a Hall mobility of 13.7 cm(2)/Vs and a carrier concentration of 8.6 x 10(20) cm(-3). These values were obtained by passivating the surface of the polymer with a thin silicon dioxide, so preventing the moisture and oxygen permeation inside the film. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：20 / 25

页数：6

共 50 条

[41] Characterization and optimization of zinc oxide films by rf magnetron sputtering
Sundaram, KB
Khan, A
[J]. THIN SOLID FILMS, 1997, 295 (1-2) : 87 - 91
[42] Synthesis of hydrogen-doped zinc oxide transparent conductive films by RF magnetron sputtering
Takahashi, Ikki
Hayashi, Yasuaki
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (01)
[43] The physical properties of Al-doped zinc oxide films prepared by RF magnetron sputtering
Park, KC
Ma, DY
Kim, KH
[J]. THIN SOLID FILMS, 1997, 305 (1-2) : 201 - 209
[44] Structure and Electrochemical Performance of Copper Doped Vanadium Oxide Thin Films Deposited by RF Magnetron Sputtering
Zhang Liang-Tang
Song Jie
Cai Min-Zhen
Xu Fu-Chun
Wu Sun-Tao
Dong Quan-Feng
[J]. CHEMICAL JOURNAL OF CHINESE UNIVERSITIES-CHINESE, 2009, 30 (05): : 971 - 975
[45] TIN-DOPED AND INDIUM-DOPED ZINC-OXIDE FILMS PREPARED BY RF MAGNETRON SPUTTERING
QIU, CX
SHIH, I
[J]. SOLAR ENERGY MATERIALS, 1986, 13 (02): : 75 - 84
[46] Effects of substrates on the structural properties of ZnO films deposited by rf magnetron sputtering
Cha, Chun Nam
Choi, Mu Hee
Ma, Tae Young
[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2012, 15 (03) : 240 - 243
[47] Physical properties of gallium and aluminium co-doped zinc oxide thin films deposited at different radio frequency magnetron sputtering power
Muchuweni, E.
Sathiaraj, T. S.
Nyakotyo, H.
[J]. CERAMICS INTERNATIONAL, 2016, 42 (15) : 17706 - 17710
[48] Study of Gallium-Doped Zinc Oxide Thin Films Processed by Atomic Layer Deposition and RF Magnetron Sputtering for Transparent Antenna Applications
Chemin, Jean-Baptiste
Adjeroud, Noureddine
Kovacova, Veronika
Glinsek, Sebastjan
Valle, Nathalie
El Hachemi, Mohamed
Girod, Stephanie
Bouton, Olivier
Lunca-Popa, Petru
Maris, Jerome Polesel
[J]. ACS OMEGA, 2023, : 5475 - 5485
[49] UV Sensitive Indium Gallium Zinc Oxide MOS- FET Fabricated By RF Magnetron Sputtering Method
Dai, Jun
Fan, Yijie
Sun, Qiang
[J]. MATERIALS IN INDUSTRY AND NANOTECHNOLOGY, 2013, 771 : 67 - 70
[50] XRD and Raman study of vanadium oxide thin films deposited on fused silica substrates by RF magnetron sputtering
Wang, XJ
Li, HD
Fei, YJ
Wang, X
Xiong, YY
Nie, YX
Feng, KA
[J]. APPLIED SURFACE SCIENCE, 2001, 177 (1-2) : 8 - 14

← 1 2 3 4 5 →