TIN-DOPED AND INDIUM-DOPED ZINC-OXIDE FILMS PREPARED BY RF MAGNETRON SPUTTERING

Doping effects of zinc oxide by indium and tin have been studied by an rf magnetron sputtering technique. It was found that both indium and tin were effective in producing low-resistivity zinc oxide thin films. The film resistivity was observed to decrease by about 3 orders of magnitude as the SnO//2 content was increased from 0 to 2 wt% (in targets) and was essentially unchanged as the SnO//2 content was further increased to 10 wt%. For the indium-doped films, the resistivity decreased continuously by about 4 orders of magnitude as the In//2O//3 content was increased from 0 to 10 wt%. From X-ray diffraction, lattice constants were found to increase with the increase of indium and tin content in the films.