Modeling high-frequency capacitance in SOI MOS capacitors

被引：0

作者：

Lukasiak, Lidia ^{[1
]}

Jasinski, Jakub ^{[1
]}

Beck, Romuald B. ^{[1
]}

Ikraiam, Fawzi A. ^{[2
]}

机构：

[1] Warsaw Univ Technol, Inst Microelect & Optoelect, Ul Nowowiejska 15-19, PL-00665 Warsaw, Poland

[2] Omar Al Mukhtar Univ, Fac Sci, Dept Phys, El Beida, Libya

来源：

ELECTRON TECHNOLOGY CONFERENCE 2016 | 2016年 / 10175卷

关键词：

capacitance; microelectronics; silicon on insulator; strong inversion;

D O I：

10.1117/12.2260788

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a model of high frequency capacitance of a SOI MOSCAP. The capacitance in strong inversion is described with minority carrier redistribution in the inversion layer taken into account. The efficiency of the computational process is significantly improved. Moreover, it is suitable for the simulation of thin-film SOI structures. It may also be applied to the characterization of non-standard SOI MOSCAPS e.g. with nanocrystalline body.

引用

页数：6

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