Modeling high-frequency capacitance in SOI MOS capacitors

被引：0
|
作者：
Lukasiak, Lidia [1 ]
Jasinski, Jakub [1 ]
Beck, Romuald B. [1 ]
Ikraiam, Fawzi A. [2 ]
机构：
[1] Warsaw Univ Technol, Inst Microelect & Optoelect, Ul Nowowiejska 15-19, PL-00665 Warsaw, Poland
[2] Omar Al Mukhtar Univ, Fac Sci, Dept Phys, El Beida, Libya
来源：
ELECTRON TECHNOLOGY CONFERENCE 2016 | 2016年 / 10175卷
关键词：
capacitance; microelectronics; silicon on insulator; strong inversion;
D O I：
10.1117/12.2260788
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a model of high frequency capacitance of a SOI MOSCAP. The capacitance in strong inversion is described with minority carrier redistribution in the inversion layer taken into account. The efficiency of the computational process is significantly improved. Moreover, it is suitable for the simulation of thin-film SOI structures. It may also be applied to the characterization of non-standard SOI MOSCAPS e.g. with nanocrystalline body.
引用
收藏
页数：6
相关论文
共 50 条
  • [31] Capacitance-Frequency Estimates of Border-Trap Densities in Multifin MOS Capacitors
    Zhao, Simeng E.
    Jiang, Rong
    Zhang, En Xia
    Liao, Wenjun
    Liang, Chundong
    Fleetwood, Daniel M.
    Schrimpf, Ronald D.
    Reed, Robert A.
    Linten, Dimitri
    Mitard, Jerome
    Collaert, Nadine
    Sioncke, Sonja
    Waldron, Niamh
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 65 (01) : 175 - 183
  • [32] Characterization of interface states in MOS systems by using photonic high-frequency capacitance-voltage responses
    Song, SJ
    Kim, HT
    Chi, SS
    Kim, MS
    Chang, WS
    Cho, SD
    Shin, HT
    Kim, TE
    Kang, HJ
    Kim, DJ
    Kim, DM
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2002, 41 (06) : 892 - 895
  • [33] On the interpretation of high-frequency capacitance data of SiC MOS structures: The effect of thermal non-equilibrium
    Sadeghi, M
    Liss, B
    Sveinbjornsson, EO
    Engstrom, O
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 981 - 984
  • [34] Photonic high-frequency capacitance-voltage characterization of interface states in metal-oxide-semiconductor capacitors
    Kim, DM
    Kim, HC
    Kim, HT
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (03) : 526 - 528
  • [35] Frequency dependence of capacitance modeling in Metal-Insulator-Metal capacitors
    Akshaykranth, A.
    Karthik, R.
    2017 INTERNATIONAL CONFERENCE OF ELECTRONICS, COMMUNICATION AND AEROSPACE TECHNOLOGY (ICECA), VOL 2, 2017, : 234 - 236
  • [36] High-Current and high-frequency filtering with feedthrough capacitors
    Kauffman, George M.
    Power Electronics Technology, 2009, 35 (09): : 22 - 27
  • [37] MATERIAL CONSIDERATIONS FOR HIGH-FREQUENCY, HIGH-POWER CAPACITORS
    WHITE, W
    GALPERIN, I
    IEEE TRANSACTIONS ON ELECTRICAL INSULATION, 1985, 20 (01): : 66 - 69
  • [38] DESIGN CONSIDERATIONS FOR HIGH-FREQUENCY CERAMIC CHIP CAPACITORS
    CODA, N
    SELVAGGI, JA
    IEEE TRANSACTIONS ON PARTS HYBRIDS AND PACKAGING, 1976, 12 (03): : 206 - 212
  • [39] HIGH-FREQUENCY FATIGUE TESTING OF FERROELECTRIC MEMORY CAPACITORS
    KISLER, Y
    SMITH, IW
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1992, 63 (05): : 3205 - 3208
  • [40] SETUP FOR THE SIMULTANEOUS MEASUREMENT OF QUASI-STATIC AND HIGH-FREQUENCY C-V CHARACTERISTICS OF MOS CAPACITORS
    GREEUW, G
    HILLEN, MW
    KOHNKE, GHP
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1982, 53 (09): : 1452 - 1455
12345