Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers

被引：0

作者：

Chung, G. ^{[1
]}

Lobbda, M. J. ^{[1
]}

Marinella, M. J. ^{[2
]}

Schroder, D. K. ^{[2
]}

Klein, P. B. ^{[3
]}

Isaacs-Smith, T. ^{[4
]}

Williams, J. W. ^{[4
]}

机构：

[1] Dow Corning Compound Semicond Solut LLC, Midland, MI 48611 USA

[2] Arizona State Univ, Ctr Solid State Elect Res, Dept Elect Engn & Ctr, Tempe, AZ 85287 USA

[3] Naval Res Lab, Washington, DC 20375 USA

[4] Auburn Univ, Dept Phys, Auburn, AL 36849 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷

关键词：

Generation and recombination lifetimes; 4H-SiC; Oxide leakage currents;

D O I：

10.4028/www.scientific.net/MSF.600-603.485

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Compared to silicon, there have been relatively few comparative studies of recombination and carrier lifetimes in SiC. For the first time, both generation and recombination carrier lifetimes are reported from the same areas in 20 mu m thick 4H SiC n-/n+ epi-wafer structures. The ratio of the generation to recombination lifetime is much different in SiC compared to Si. Activation energy calculated from SiC generation lifetimes shows that traps with energy levels near mid-gap dominate the generation lifetime. Comparison of both generation and recombination lifetimes and dislocation counts measured in the device area show no correlation in either case.

引用

页码：485 / +

页数：2

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