Spatial Profiling of Planar Defects in 4H-SiC Epilayers using Micro-photoluminescence Mapping

被引：1
|
作者：
Feng, Gan [1 ]
Suda, Jun [1 ]
Kimoto, Tsunenobu [1 ,2 ]
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan
[2] Kyoto Univ, Photon & Elect Sci & Engn Ctr, Kyoto 6068501, Japan
来源：
SILICON CARBIDE AND RELATED MATERIALS 2008 | 2009年 / 615-617卷
关键词：
micro-photoluminescence mapping; stacking faults; exciton energy gap; STACKING-FAULTS; WAFERS;
D O I：
10.4028/www.scientific.net/MSF.615-617.245
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The micro-photoluminescence (micro-PL) spectroscopy and its intensity mapping have been utilized to investigate the planar defects, stacking faults (SFs), in 4H-SiC epilayers. Strong PL emissions from the SFs are observed even at room temperature. It is found that each kind of SF shows the distinct PL emission behaviours. Three kinds of SFs: intrinsic Frank SFs, double Shockley SFs, and in-grown SFs, have been identified in the samples based on the micro-PL spectra. At the same time, the micro-PL intensity mapping at the emission band of each SF has been performed to spatially profile the SFs. The shapes, distributions, and densities of SFs in the epilayers are then presented. The PL emission behaviours of each SF at low temperature are also studied.
引用
收藏
页码：245 / 250
页数：6
相关论文
共 50 条
  • [31] Determination of nitrogen doping concentration in doped 4H-SiC epilayers by low temperature photoluminescence
    Henry, A
    Forsberg, U
    Linnarsson, MK
    Janzén, E
    PHYSICA SCRIPTA, 2005, 72 (2-3) : 254 - 257
  • [32] Effects of Excitation Power and Temperature on Photoluminescence from Stacking Faults in 4H-SiC Epilayers
    Nakamura, Mitsutaka
    Yoshimoto, Masahiro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (01)
  • [33] Growth and electrical characterization of 4H-SiC epilayers
    Kimoto, T.
    Danno, K.
    Hori, T.
    Matsunami, H.
    SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 35 - +
  • [34] Nitrogen delta doping in 4H-SiC epilayers
    Henry, A
    Storasta, L
    Janzén, E
    SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 153 - 156
  • [35] Stacking faults in 4H-SiC epilayers and IGBTs
    Wang, Pin
    Cheng, Weiwei
    Li, Yifei
    Xu, Lei
    Hou, Pengxiang
    Yu, Le
    Li, Yun
    Li, Zheyang
    Jin, Rui
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2024, 177
  • [36] Micro-raman investigation of defects in a 4H-SiC homoepilayer
    Liu, X. F.
    Sun, G. S.
    Li, J. M.
    Zhao, Y. M.
    Li, J. Y.
    Wang, L.
    Zhao, W. S.
    Luo, M. C.
    Zeng, Y. P.
    SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 387 - +
  • [37] Radiation defects produced in 4H-SiC epilayers by proton and alpha-particle irradiation
    Hazdra, Pavel
    Zahlava, Vit
    Vobecky, Jan
    Berthou, Maxime
    Mihaila, Andrei
    SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 661 - +
  • [38] Investigations of 3C-SiC inclusions in 4H-SiC epilayers on 4H-SiC single crystal substrates
    Weimin Si
    Michael Dudley
    Hua Shuang Kong
    Joe Sumakeris
    Calvin Carter
    Journal of Electronic Materials, 1997, 26 : 151 - 159
  • [39] Long Carrier Lifetime in 4H-SiC Epilayers using Chlorinated Precursors
    Shrivastava, A.
    Klein, P. B.
    Glaser, E. R.
    Caldwell, J. D.
    Bolotnikov, A. V.
    Sudarshan, T. S.
    SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 291 - 294
  • [40] Optoelectronic and structural characterization of trapezoidal defects in 4H-SiC epilayers and the effect on MOSFET reliability
    El Hageali, Sami A.
    Guthrey, Harvey
    Johnston, Steven
    Norman, Andrew
    Soto, Jake
    Odekirk, Bruce
    Stahlbush, Robert E.
    Mahadik, Nadeemullah A.
    Gorman, Brian P.
    Al-Jassim, Mowafak
    JOURNAL OF APPLIED PHYSICS, 2023, 134 (07)
12345