Effect of incorporating nonlanthanoidal indium on the ferroelectric performance of Bi4Ti3O12 thin films

被引：4
|
作者：
Chang, Y. C. [1 ]
Kuo, D. H. [1 ]
机构：
[1] Natl Dong Hwa Univ, Dept Mat Sci & Engn, Hualien 974, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 07期
关键词：
D O I：
10.1063/1.2219138
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Nonlanthanoid-substituted In-x-Bi4Ti3O12 films with different indium contents at x=0, 0.2, 0.4, and 0.5, based upon the chemical formula of (Bi4-xInx)Ti3O12, were prepared at 600 degrees C by chemical solution deposition. In-0.4-Bi4Ti3O12 films displayed a large remanent polarization of 57 mu C/cm(2), coercive field of 100 KV/cm, high nonvolatile polarization >= 30 mu C/cm(2) after 10(10) switching cycles, and low annealing temperature of 600 degrees C. Good ferroelectric properties are mainly attributed to the partial substitution of the smaller-sized Ti4+ site by the larger-sized In3+ to enhance electrical polarization by a dimensional change of unit cell and to provide fatigue resistance by lattice distortion and chemical stabilization. (c) 2006 American Institute of Physics.
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