Hysteresis loops characteristics of Bi4Ti3O12 ferroelectric thin films with different configuration on Si substrates

被引：0

作者：

Wang, H ^{[1
]}

机构：

[1] Guilin Univ Elect Technol, Dept Commun & Informat Engn, Guilin 541004, Peoples R China

来源：

JOURNAL OF INORGANIC MATERIALS | 2004年 / 19卷 / 01期

关键词：

ferroelectric thin films; P-Vhysteresis loops characteristics; sol-gel method;

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In order to fabricate high quality ferroelectric thin films qualified for ferroelectric memories, different ferroelectric thin film systems, with the structures of MFM and MFS, were deposited by using the sol-gel technique. The ferroelectric properties and the P - V hysteresis loops characteristics of these different ferroelectric thin film systems were analyzed with comparison. Based on the test results, a new practicable configuration of Ag/Pb(Zr0.52Ti0.48)O-3/ Bi4Ti3O12/PSi was fabricated, which can improve the ferroelectric properties and hysteresis loops characteristics of the ferroelectric thin films.

引用

页码：153 / 158

页数：6

共 8 条

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