CVD of Zr0.65Ti0.35O2 thin films using a single-source precursor of novel anhydrous mixed-metal nitrates

被引：8

作者：

Shao, Qiyue ^{[1
]}

Li, Aidong

Zhang, Wenqi

Wu, Di

Liu, Zhiguo

Ming, Naiben

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Dept Mat Sci & Engn, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Natl Lab Solid State Microstruct, Dept Phys, Nanjing 210093, Peoples R China

来源：

CHEMICAL VAPOR DEPOSITION | 2006年 / 12卷 / 07期

关键词：

anhydrous metal nitrate; gate dielectric film; single-source precursor; ZrxTi1-xO2;

D O I：

10.1002/cvde.200506480

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A novel Zr/Ti mixed metal nitrate [ZrxTi1-x(NO3)(4)] has been successfully developed as a single-source precursor to deposit multicomponent metal oxide films. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) analyses confirm that Zr0.65Ti0.35O2 films are successfully prepared from this anhydrous nitrate precursor using CVD. The basal dielectric properties of Zr0.65Ti0.35O2 films are studied, and well-defined C-V curves with negligible hysteresis are achieved. Compared to pure TiO2 and ZrO2 films, the Zr0.65Ti0.35O2 films exhibit a trade-off of dielectric properties with a moderate bandgap value of 4.3 eV and a value for k of 47. ZrxTi1-xO2 is, therefore, a promising candidate for gate-dielectric application, and an anhydrous mixed-metal nitrate can be a potential single-source precursor for high-k materials derived from CVD.

引用

页码：423 / 428

页数：6

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