Mixed-metal oxide films via a heterobimetallic complex as an MOCVD single-source precursor

被引：10
|
作者：
Shyu, SG
Wu, JS
Chuang, SH
Chi, KM
Sung, YS
机构：
[1] NATL CHUNG CHENG UNIV,DEPT CHEM,CHIAYI,TAIWAN
[2] NATL CHIAO TUNG UNIV,DEPT APPL CHEM,SHIN CHU,TAIWAN
来源：
CHEMICAL COMMUNICATIONS | 1996年 / 19期
关键词：
D O I：
10.1039/cc9960002239
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A single-phase polycrystalline mixed-metal oxide WCoO4 film on Si(100) can be prepared by MOCVD with the use of [(eta-C5H5)(CO)(3)WCo(CO)(4)] as a single-source precursor.
引用
收藏
页码：2239 / 2240
页数：2
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