Deposition of thin films of gallium sulfide from a novel liquid single-source precursor, Ga(SOCNEt2)3, by aerosol-assisted CVD

被引:0
|
作者
Horley, GA [1 ]
Lazell, MR [1 ]
O'Brien, P [1 ]
机构
[1] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AY, England
关键词
D O I
10.1002/(SICI)1521-3862(199910)5:5<203::AID-CVDE203>3.0.CO;2-L
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Group III chalcogenides are interesting materials for photovoltaic and optoelectronic devices. Here the synthesis and use of a novel, single-source precursor for the deposition of face-centered cubic GaS by aerosol-assisted CVD is described. The films show a high degree of orientation and an unusual spherical morphology arranged in a reasonably uniform array on the substrate (see Figure).
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页码:203 / +
页数:4
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