Deposition of thin films of gallium sulfide from a novel liquid single-source precursor, Ga(SOCNEt2)3, by aerosol-assisted CVD

被引：0

作者：

Horley, GA ^{[1
]}

Lazell, MR ^{[1
]}

O'Brien, P ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AY, England

来源：

CHEMICAL VAPOR DEPOSITION | 1999年 / 5卷 / 05期

关键词：

D O I：

10.1002/(SICI)1521-3862(199910)5:5<203::AID-CVDE203>3.0.CO;2-L

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Group III chalcogenides are interesting materials for photovoltaic and optoelectronic devices. Here the synthesis and use of a novel, single-source precursor for the deposition of face-centered cubic GaS by aerosol-assisted CVD is described. The films show a high degree of orientation and an unusual spherical morphology arranged in a reasonably uniform array on the substrate (see Figure).

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页码：203 / +

页数：4

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