Room Temperature Formation of High-Mobility Two-Dimensional Electron Gases at Crystalline Complex Oxide Interfaces

被引：65
|
作者：
Chen, Y. Z. [1 ]
Bovet, N. [2 ]
Kasama, T. [3 ]
Gao, W. W. [4 ,5 ]
Yazdi, S. [3 ]
Ma, C. [4 ,5 ]
Pryds, N. [1 ]
Linderoth, S. [1 ]
机构：
[1] Tech Univ Denmark, Dept Energy Convers & Storage, DK-4000 Roskilde, Denmark
[2] Univ Copenhagen, Nanosci Ctr, Dept Chem, DK-2100 Copenhagen, Denmark
[3] Tech Univ Denmark, Ctr Electron Nanoscopy, DK-2800 Lyngby, Denmark
[4] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[5] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
来源：
ADVANCED MATERIALS | 2014年 / 26卷 / 09期
关键词：
EPITAXIAL-GROWTH; CONDUCTIVITY; MECHANISMS; CEO2(001); CREATION;
D O I：
10.1002/adma.201304634
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Well-controlled sub-unit-cell layer-bylayer epitaxial growth of spinel alumina is achieved at room temperature on a TiO2-terminated SrTiO(3)single-crystalline substrate. By tailoring the interface redox reaction, 2D electron gases with mobilities exceeding 3000 cm 2 V-1 s(-1) are achieved at this novel oxide interface.
引用
收藏
页码：1462 / 1467
页数：6
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