Room Temperature Formation of High-Mobility Two-Dimensional Electron Gases at Crystalline Complex Oxide Interfaces

被引：65

作者：

Chen, Y. Z. ^{[1
]}

Bovet, N. ^{[2
]}

Kasama, T. ^{[3
]}

Gao, W. W. ^{[4
,5
]}

Yazdi, S. ^{[3
]}

Ma, C. ^{[4
,5
]}

Pryds, N. ^{[1
]}

Linderoth, S. ^{[1
]}

机构：

[1] Tech Univ Denmark, Dept Energy Convers & Storage, DK-4000 Roskilde, Denmark

[2] Univ Copenhagen, Nanosci Ctr, Dept Chem, DK-2100 Copenhagen, Denmark

[3] Tech Univ Denmark, Ctr Electron Nanoscopy, DK-2800 Lyngby, Denmark

[4] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[5] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

来源：

ADVANCED MATERIALS | 2014年 / 26卷 / 09期

关键词：

EPITAXIAL-GROWTH; CONDUCTIVITY; MECHANISMS; CEO2(001); CREATION;

D O I：

10.1002/adma.201304634

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Well-controlled sub-unit-cell layer-bylayer epitaxial growth of spinel alumina is achieved at room temperature on a TiO2-terminated SrTiO(3)single-crystalline substrate. By tailoring the interface redox reaction, 2D electron gases with mobilities exceeding 3000 cm 2 V-1 s(-1) are achieved at this novel oxide interface.

引用

页码：1462 / 1467

页数：6

共 50 条

[31] Barrier D− complexes in a high-mobility two-dimensional electron system
A. B. Van’kov
L. V. Kulik
I. V. Kukushkin
A. S. Zhuravlev
V. E. Kirpichev
JETP Letters, 2008, 87 : 145 - 149
[32] Interaction effects in high-mobility two-dimensional electron and hole systems
Savchenko, AK
Galaktionov, EA
Safonov, SS
Proskuryakov, YY
Li, L
Pepper, M
Simmons, MY
Ritchie, DA
Linfield, EH
Kvon, ZD
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2005, 242 (06): : 1204 - 1208
[33] Pair formation temperature in jelliumlike two-dimensional electron gases
Nagy, I.
Zabala, N.
Echenique, P. M.
PHYSICAL REVIEW B, 2009, 80 (09):
[34] Two-dimensional semiconductors with possible high room temperature mobility
Wenxu Zhang
Zhishuo Huang
Wanli Zhang
Yanrong Li
Nano Research, 2014, 7 : 1731 - 1737
[35] Two-dimensional semiconductors with possible high room temperature mobility
Zhang, Wenxu
Huang, Zhishuo
Zhang, Wanli
Li, Yanrong
NANO RESEARCH, 2014, 7 (12) : 1731 - 1737
[36] COMPLEMENTARY CIRCUIT WITH ALGAAS/GAAS HETEROSTRUCTURE MISFETS EMPLOYING HIGH-MOBILITY TWO-DIMENSIONAL ELECTRON AND HOLE GASES
MIZUTANI, T
FUJITA, S
YANAGAWA, F
ELECTRONICS LETTERS, 1985, 21 (23) : 1116 - 1117
[37] Spin-charge interconversion of two-dimensional electron gases at oxide interfaces
Zheng, Dongyao
Zhang, Hui
Hu, Fengxia
Shen, Baogen
Sun, Jirong
Zhao, Weisheng
NANOTECHNOLOGY, 2024, 35 (09)
[38] The origin of two-dimensional electron gases at oxide interfaces: insights from theory
Bristowe, N. C.
Ghosez, Philippe
Littlewood, P. B.
Artacho, Emilio
JOURNAL OF PHYSICS-CONDENSED MATTER, 2014, 26 (14)
[39] Creation of High Mobility Two-Dimensional Electron Gases via Strain Induced Polarization at an Otherwise Nonpolar Complex Oxide Interface
Chen, Yunzhong
Trier, Felix
Kasama, Takeshi
Christensen, Dennis V.
Bovet, Nicolas
Balogh, Zoltan I.
Li, Han
Thyden, Karl Tor Sune
Zhang, Wei
Yazdi, Sadegh
Norby, Poul
Pryds, Nini
Linderoth, Soren
NANO LETTERS, 2015, 15 (03) : 1849 - 1854
[40] Negative magnetoresistance of a high-mobility two-dimensional electron gas in a nonlinear regime
A. A. Bykov
A. K. Kalagin
A. K. Bakarov
Journal of Experimental and Theoretical Physics Letters, 2005, 81 : 406 - 408

← 1 2 3 4 5 →