Room Temperature Formation of High-Mobility Two-Dimensional Electron Gases at Crystalline Complex Oxide Interfaces

被引：65

作者：

Chen, Y. Z. ^{[1
]}

Bovet, N. ^{[2
]}

Kasama, T. ^{[3
]}

Gao, W. W. ^{[4
,5
]}

Yazdi, S. ^{[3
]}

Ma, C. ^{[4
,5
]}

Pryds, N. ^{[1
]}

Linderoth, S. ^{[1
]}

机构：

[1] Tech Univ Denmark, Dept Energy Convers & Storage, DK-4000 Roskilde, Denmark

[2] Univ Copenhagen, Nanosci Ctr, Dept Chem, DK-2100 Copenhagen, Denmark

[3] Tech Univ Denmark, Ctr Electron Nanoscopy, DK-2800 Lyngby, Denmark

[4] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[5] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

来源：

ADVANCED MATERIALS | 2014年 / 26卷 / 09期

关键词：

EPITAXIAL-GROWTH; CONDUCTIVITY; MECHANISMS; CEO2(001); CREATION;

D O I：

10.1002/adma.201304634

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Well-controlled sub-unit-cell layer-bylayer epitaxial growth of spinel alumina is achieved at room temperature on a TiO2-terminated SrTiO(3)single-crystalline substrate. By tailoring the interface redox reaction, 2D electron gases with mobilities exceeding 3000 cm 2 V-1 s(-1) are achieved at this novel oxide interface.

引用

页码：1462 / 1467

页数：6

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